New phase synthesis in surface layer in the conditions of ion implantation

Abstract

The simple models for the formation of a new phase in a surface layer during ion implantation are discussed. The model of the new phase formation in the same conditions and considering the finiteness of relaxation time is suggested. The model parameters were evaluated using literature data. The stresses and strains in diffusion zone were calculated. The authors demonstrated that the concentration distribution and values of stresses depend on the relation between time scales of various physical processes.