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|Title:||Optimization of limiting modes of streamer semiconductor laser|
|Authors:||Parashchyk, V. V.|
Rusakov, К. I.
Dzhabbarov, R. B.
|Keywords:||optimization; limiting modes; streamer lasers; semiconductor lasers; electric fields; optical fields; streamer discharges; wide-gap semiconductors; spectroscopic properties; reconstruction; luminescent characteristics; active environment; semiconductor layers; protecting layers; crystallographic orientation; crystal microrelief; wave length; light; streamer luminescence; compounds|
|Publisher:||Томский политехнический университет|
|Citation:||Parashchyk V. V. Optimization of limiting modes of streamer semiconductor laser / V. V. Parashchyk, К. I. Rusakov, R. B. Dzhabbarov // Bulletin of the Tomsk Polytechnic University. — 2007. — Vol. 310, № 1. — [P. 78-81].|
|Abstract:||The influence of intensive electric and optical fields produced by streamer discharge in wide-gap semiconductor on their spectroscopic properties has been studied. The given effect is developed at appearance of reversed reconstruction of active environment luminescent characteristics. The methods of sufficient increase in durability and efficiency of streamer laser at limiting modes based on application of semiconductor protecting layers of a definite crystallographic orientation and crystal microrelief with element size of light wave length order. Streamer luminescence in new perspective CaGa2S4:Eu, Ca4Ga2S7:Eu compounds is found and studied.|
|Appears in Collections:||Известия ТПУ|
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