Температурные условия CVD-осаждения как определяющий фактор в формировании плёнок кобальта с заданными эксплуатационными характеристиками

Abstract

Co films were deposited on Si(100) substrates by chemical vapor deposition (CVD). Co(N'acN'ac)2 was used as a precursor. The sizes of coherent scattering region (CSR) and phase composition of studied Co films were determined by the X-ray diffraction (XRD) analysis. The chemical composition was identified by the Energy-dispersive X-ray spectroscopy (EDX). As a result of this work the effect of substrate temperature on the texture, sizes of CSR, phase and chemical composition of Co films was revealed. It was found that Co films consist of alpha-Co and beta-Co crystals. Varying the substrate temperature allows to change widely the texture, sizes of CSR and chemical composition of Co films. The cobalt content and the texture degree of Co films are characterized by extreme substrate temperature dependence with a maximum at 320-330 °С. The size of CSR is weakly depends on the substrate temperature in the range of 300-330 °С but it starts to decrease at temperatures over 330 °С.