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http://earchive.tpu.ru/handle/11683/39506
Полная запись метаданных
Поле DC | Значение | Язык |
---|---|---|
dc.contributor.author | Gradoboev, Aleksandr Vasilyevich | en |
dc.contributor.author | Tesleva, Elena Pavlovna | en |
dc.date.accessioned | 2017-06-08T04:19:18Z | - |
dc.date.available | 2017-06-08T04:19:18Z | - |
dc.date.issued | 2017 | - |
dc.identifier.citation | Gradoboev A. V. Local mechanical stress relaxation of Gunn diodes irradiated by protons / A. V. Gradoboev, E. P. Tesleva // Journal of Physics: Conference Series. — 2017. — Vol. 830 : Energy Fluxes and Radiation Effects 2016 : 5th International Congress, 2–7 October 2016, Tomsk, Russian Federation : [materials]. — [012133, 9 p.]. | ru |
dc.identifier.uri | http://earchive.tpu.ru/handle/11683/39506 | - |
dc.description.abstract | The aim of the work is studying the impact of Gunn diodes thermocompression bonding conditions upon their resistance to being radiated with protons of various energies. It was established that the tough conditions of Gunn diodes thermocompression bonding results in local mechanic stresses introduced into the active layer of the device, reduction of electron mobility because of the faults introduction and, subsequently, to reduction of operating current, power of UHF generation, percentage of qualitative units production and general reduction of production efficiency of the devices with required characteristics. Irradiation of Gunn diodes produced under the tough conditions of thermocompression bonding with protons which energy is (40–60) MeV with an absorbed dose of (1–6)•10{2} Gy does not practically reduce the radiation resistance of Gunn diodes produced with application of the given technique. This technique can be recommended for all semiconductor devices on the base of GaAs, which parameters depend significantly upon the mobility of the electrons, to increase the efficiency of production. | en |
dc.language.iso | en | en |
dc.publisher | IOP Publishing | ru |
dc.relation.ispartof | Journal of Physics: Conference Series. Vol. 830 : Energy Fluxes and Radiation Effects 2016. — Bristol, 2017. | ru |
dc.rights | info:eu-repo/semantics/openAccess | en |
dc.subject | механические напряжения | ru |
dc.subject | диоды Ганна | ru |
dc.subject | облучение | ru |
dc.subject | протоны | ru |
dc.subject | склеивание | ru |
dc.subject | радиационная стойкость | ru |
dc.subject | полупроводниковые приборы | ru |
dc.subject | подвижность | ru |
dc.subject | электроны | ru |
dc.title | Local mechanical stress relaxation of Gunn diodes irradiated by protons | en |
dc.type | Conference Paper | en |
dc.type | info:eu-repo/semantics/publishedVersion | en |
dc.type | info:eu-repo/semantics/conferencePaper | en |
dcterms.audience | Researches | en |
local.department | Национальный исследовательский Томский политехнический университет (ТПУ)::Юргинский технологический институт (филиал) (ЮТИ)::Кафедра сварочного производства (КСП) | ru |
local.description.firstpage | 12133 | - |
local.filepath | http://dx.doi.org/10.1088/1742-6596/830/1/012133 | - |
local.identifier.bibrec | RU\TPU\network\20680 | - |
local.identifier.colkey | RU\TPU\col\18891 | - |
local.identifier.perskey | RU\TPU\pers\34242 | - |
local.identifier.perskey | RU\TPU\pers\33093 | - |
local.localtype | Доклад | ru |
local.volume | 8302016 | - |
local.conference.name | Energy Fluxes and Radiation Effects 2016 | - |
local.conference.date | 2016 | - |
dc.identifier.doi | 10.1088/1742-6596/830/1/012133 | - |
Располагается в коллекциях: | Материалы конференций |
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Файл | Описание | Размер | Формат | |
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dx.doi.org-10.1088-1742-6596-830-1-012133.pdf | 497,08 kB | Adobe PDF | Просмотреть/Открыть |
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