Концентрационные и температурные зависимости теплоемкости полупроводников с примесями переходных элементов

Abstract

Regularities in the formation and features of the electronic structure of impurities of transition elements belong to topical problems in the physics of doped semiconductors. Alloying semiconductors with impurities of transition elements cause to hybridization of electronic states. This work presents the aspects of Fermi-liquid formalism in the context of hybridized electronic state. In other works the anomal temperature dependences in heat capacity was detected. In this work we identified some concentration regimes in which this anomal dependences can be observed.