LEDs based upon AlGaInP heterostructures with multiple quantum wells: comparison of fast neutrons and gammaquanta irradiation

Abstract

The paper presents the research results of watt and volt characteristics of LEDs based upon AlGaInP heterostructures with multiple quantum wells in the active region. The research is completed for LEDs (emission wavelengths 624 nm and 590 nm) under irradiation by fast neutron and gamma-quanta in passive powering mode. Watt-voltage characteristics in the average and high electron injection areas are described as a power function of the operating voltage. It has been revealed that the LEDs transition from average electron injection area to high electron injection area occurs by overcoming the transition area. It disappears as it get closer to the limit result of the irradiation LEDs that is low electron injection mode in the entire supply voltage range. It has been established that the gamma radiation facilitates initial defects restructuring only 42% compared to 100% when irradiation is performed by fast neutrons. Ratio between measured on the boundary between low and average electron injection areas current value and the contribution magnitude of the first stage LEDs emissive power reducing is established. It is allows to predict LEDs resistance to irradiation by fast neutrons and gamma rays.