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Название: The Influence of High-Power Ion Beams and High-Intensity Short-Pulse Implantation of Ions on the Properties of Ceramic Silicon Carbide
Авторы: Kabyshev, Alexander Vasilievich
Konusov, Fedor Valerievich
Pavlov, Sergey Konstantinovich
Remnev, Gennady Efimovich
Ключевые слова: мощности; пучки; ионы; короткие импульсы; имплантация ионов; карбид кремния; структурные характеристики; электрические характеристики; оптические характеристики
Дата публикации: 2016
Издатель: IOP Publishing
Библиографическое описание: The Influence of High-Power Ion Beams and High-Intensity Short-Pulse Implantation of Ions on the Properties of Ceramic Silicon Carbide / A. V. Kabyshev [et al.] // IOP Conference Series: Materials Science and Engineering. — United Kingdom : IOP Publishing, 2016. — Vol. 110 : Radiation-Thermal Effects and Processes in Inorganic Materials (RTEP2015) : International Scientific Conference, 31 August to 10 September 2015, Tomsk, Russia : [proceedings]. — [012006, 5 p.].
Аннотация: The paper is focused on the study of the structural, electrical and optical characteristics of the ceramic silicon carbide before and after irradiation in the regimes of the high-power ion beams (HPIB) and high-intensity short-pulse implantation (HISPI) of carbon ions. The dominant mechanism of transport of charge carriers, their type and the energy spectrum of localized states (LS) of defects determining the properties of SiC were established. Electrical and optical characteristics of ceramic before and after irradiation are determined by the biographical and radiation defects whose band gap (BG) energy levels have a continuous energetic distribution. A dominant p-type activation component of conduction with participation of shallow acceptor levels 0.05-0.16 eV is complemented by hopping mechanism of conduction involving the defects LS with a density of 1.2T0{17}-2.4T0{18} eV{-}Am{-3} distributed near the Fermi level.The effect of radiation defects with deep levels in the BG on properties change dominates after HISPI. A new material with the changed electronic structure and properties is formed in the near surface layer of SiC after the impact of the HPIB.
URI: http://earchive.tpu.ru/handle/11683/18073
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