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Название: Selective deposition of polycrystalline diamond films using photolithography with addition of nanodiamonds as nucleation centers
Авторы: Okhotnikov, Vitaly Vladimirovich
Linnik, Stepan Andreevich
Gaydaychuk, Alexander Valerievich
Shashev, D. V.
Nazarova, G. Yu.
Yurchenko, V. I.
Ключевые слова: осаждение; поликристаллические пленки; алмазные пленки; алмазные поликристаллические пленки; фотолитография; наноалмазы; зародышеобразование
Дата публикации: 2016
Издатель: IOP Publishing
Библиографическое описание: Selective deposition of polycrystalline diamond films using photolithography with addition of nanodiamonds as nucleation centers / V. V. Okhotnikov [et al.] // IOP Conference Series: Materials Science and Engineering. — 2016. — Vol. 116 : Advanced Materials and New Technologies in Modern Materials Science : International Conference, 9–11 November 2015, Tomsk, Russia : [proceedings]. — [012001, 6 p.].
Аннотация: A new method of selective deposition of polycrystalline diamond has been developed and studied. The diamond coatings with a complex, predetermined geometry and resolution up to 5 [mu]m were obtained. A high density of polycrystallites in the coating area was reached (up to 32·10{7} pcs/cm{2}). The uniformity of the film reached 100%, and the degree of the surface contamination by parasitic crystals did not exceed 2%. The technology was based on the application of the standard photolithography with an addition of nanodiamond suspension into the photoresist that provided the creation of the centers of further nucleation in the areas which require further overgrowth. The films were deposited onto monocrystalline silicon substrates using the method of "hot filaments" in the CVD reactor. The properties of the coating and the impact of the nanodiamond suspension concentration in the photoresist were also studied. The potential use of the given method includes a high resolution, technological efficiency, and low labor costs compared to the standard methods (laser treatment, chemical etching in aggressive environments).
URI: http://earchive.tpu.ru/handle/11683/18925
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