Исследование молекулярных прекурсоров для получения абсорберов солнечных батарей на основе сульфида олова

Abstract

Metal chalcogenide semiconductors have performed a significant role as absorber layers in thin-film photovoltaic devices. Among variety of combinations, CdS, CdSe, and CdTe have become popular choices in photovoltaic industry due to achieved higher efficiency in conversion energy. Despite of this fact, resource limit on Cd, Te, as well as restrictions on heavy metal usage, leads to the increasing investigation of earth abundant, environmental friendly absorber materials such as tin sulfide SnS. These characteristics together with a high absorption coefficient and narrow band gap demonstrate a high potential of tin sulphide in photovoltaics. To the contrary, up till now devices incorporating SnS show low efficiencies of 4%, which points at the further explorations of this semiconductor to d

Metal chalcogenide semiconductors have performed a significant role as absorber layers in thin-film photovoltaic devices. Among variety of combinations, CdS, CdSe, and CdTe have become popular choices in photovoltaic industry due to achieved higher efficiency in conversion energy. Despite of this fact, resource limit on Cd, Te, as well as restrictions on heavy metal usage, leads to the increasing investigation of earth abundant, environmental friendly absorber materials such as tin sulfide SnS. These characteristics together with a high absorption coefficient and narrow band gap demonstrate a high potential of tin sulphide in photovoltaics. To the contrary, up till now devices incorporating SnS show low efficiencies of 4%, which points at the further explorations of this semiconductor to d