Низкотемпературная теплоёмкость графена

Abstract

The expression for the electronic heat capacity of the graphene with impurities and areas of shortrange order was obtained in this study. It is shown that the value of heat capacity is determined linear contributions from the ideal structure and impurities. The quadratic contribution from scattering at the shortrange structures determined by the size of an elementary translational element graphene. It can significantly change the temperature behavior of the heat capacity of the ordering and stratification cases. A comparison the calculated values of the electronic contribution and theoretical data on the phonon heat capacity allow us to say that the electronic heat capacity of non-ideal graphene can be decisive in the temperature range up to ~ 100K.