Please use this identifier to cite or link to this item: http://earchive.tpu.ru/handle/11683/51787
Title: Main principles of developing exploitation models of semiconductor devices
Authors: Gradoboev, Aleksandr Vasilyevich
Simonova, Anastasia Vladimirovna
Keywords: эксплуатация; полупроводниковые приборы; ионизирующее облучение; надежность; эксплуатационные свойства; диоды Шоттки; диоды Ганна; транзисторы Шоттки
Issue Date: 2018
Publisher: IOP Publishing
Citation: Gradoboev A. V. Main principles of developing exploitation models of semiconductor devices / A. V. Gradoboev, A. V. Simonova // IOP Conference Series: Materials Science and Engineering. — Bristol : IOP Publishing, 2018. — Vol. 363 : Cognitive Robotics : II International Conference, 22–25 November 2017, Tomsk, Russian Federation : [proceedings]. — [012025, 6 p.].
Abstract: The paper represents primary tasks, solutions of which allow to develop the exploitation modes of semiconductor devices taking into account complex and combined influence of ionizing irradiation and operation factors. The structure of the exploitation model of the semiconductor device is presented, which is based on radiation and reliability models. Furthermore, it was shown that the exploitation model should take into account complex and combine influence of various ionizing irradiation types and operation factors. The algorithm of developing the exploitation model of the semiconductor devices is proposed. The possibility of creating the radiation model of Schottky barrier diode, Schottky field-effect transistor and Gunn diode is shown based on the available experimental data. The basic exploitation model of IRLEDs based upon double AlGaAs heterostructures is represented. The practical application of the exploitation models will allow to output the electronic products with guaranteed operational properties.
URI: http://earchive.tpu.ru/handle/11683/51787
Appears in Collections:Материалы конференций

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