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http://earchive.tpu.ru/handle/11683/34837| Title: | The ability to create NTD silicon technology in the IRT-T reactor in a horizontal experimental channel with one-side access |
| Authors: | Varlachev, Valery Aleksandrovich Golovathkiy, Aleksey Vasilievich Emets, Evgeny Gennadievich Butko, Yana Aleksandrovna |
| Keywords: | реакторы; ИРТ-Т; нейтронное легирование; монокристаллический кремний; тепловые нейтроны |
| Issue Date: | 2016 |
| Publisher: | IOP Publishing |
| Citation: | The ability to create NTD silicon technology in the IRT-T reactor in a horizontal experimental channel with one-side access / V. A. Varlachev [et al.] // IOP Conference Series: Materials Science and Engineering. — 2016. — Vol. 135 : Issues of Physics and Technology in Science, Industry and Medicine : VIII International Scientific Conference, 1–3 June 2016, Tomsk, Russia : [proceedings]. — [012047, 5 p.]. |
| Abstract: | The article shows the ability of creation of neutron transmutation doping (NTD) of monocrystalline silicon technology in the reactor's channel, which has a one-side access. In the article a distribution of thermal neutron flux through the length of channel and it's radius, neutron spectrum were obtained which confirmed that horizontal experimental channel HEC-1 is suitable for NTD. |
| URI: | http://earchive.tpu.ru/handle/11683/34837 |
| Appears in Collections: | Материалы конференций |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| dx.doi.org-10.1088-1757-899X-135-1-012047.pdf | 951,76 kB | Adobe PDF | View/Open |
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