Оптимизация конфигурации активной зоны реактора ИРТ-Т для облучения слитков монокристаллического кремния большого диаметра

Abstract

Among all the existing methods of impurity implantation, the highest homogeneity of the electrophysical parameters of silicon is achieved using the technology of neutron transmutation doping (NTD). Therefore, silicon, doped by this technology, is widely used in the world practice to create devices with a minimum scatter of specific electrical resistance: thyristors, charge-coupled devices, radiation detectors, photodetectors. Interest to NTD is due to its two main advantages over conventional metallurgical methods of introducing impurities. This, first, high doping accuracy, since the concentration of impurities introduced at a constant neutron flux is proportional to the time of irradiation, which can be controlled with great accuracy. Secondly, this is a high homogeneity of impurity distribution, which is determined by the random distribution of isotopes and neutron capture cross sections. The creation of technology of NTD of silicon with given properties is a complex problem. To solve it, it is necessary to fulfill the following conditions: to ensure high homogeneity of neutron fluence and optimize the neutron-physical parameters of the irradiation zone to obtain a thermalized neutron spectrum.