Please use this identifier to cite or link to this item: http://earchive.tpu.ru/handle/11683/55437
Title: Destruction of LED heterostructures under high-current electron beam irradiation
Authors: Zixuan Li
Jiyao Xian
Sysoyeva, S. G.
Keywords: светодиодные гетероструктуры; облучение; электронные пучки; эпитаксильные слои; сапфировые подложки
Issue Date: 2019
Publisher: IOP Publishing
Citation: Zixuan Li. Destruction of LED heterostructures under high-current electron beam irradiation / Zixuan Li, Jiyao Xian, S. G. Sysoyeva // IOP Conference Series: Materials Science and Engineering. — Bristol : IOP Publishing, 2019. — Vol. 511 : Perspective Materials of Constructional and Medical Purpose : International Scientific and Technical Youth Conference, 26–30 November 2018, Tomsk, Russian Federation : [proceedings]. — [012004, 5 p.].
Abstract: This paper presents the experimental results of the fracture morphology of InGaN/GaN heterostructures and epitaxial GaN layers deposited on sapphire substrates after irradiation with high current electron beams. A special type of damage - microspheres, ~1-5 [mu]m was discovered and studied. The results show that the microspheres act as diffractive optical elements redistributing the stimulated emission of InGaN/GaN in space.
URI: http://earchive.tpu.ru/handle/11683/55437
Appears in Collections:Материалы конференций

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