Please use this identifier to cite or link to this item:
http://earchive.tpu.ru/handle/11683/55437
Title: | Destruction of LED heterostructures under high-current electron beam irradiation |
Authors: | Zixuan Li Jiyao Xian Sysoyeva, S. G. |
Keywords: | светодиодные гетероструктуры; облучение; электронные пучки; эпитаксильные слои; сапфировые подложки |
Issue Date: | 2019 |
Publisher: | IOP Publishing |
Citation: | Zixuan Li. Destruction of LED heterostructures under high-current electron beam irradiation / Zixuan Li, Jiyao Xian, S. G. Sysoyeva // IOP Conference Series: Materials Science and Engineering. — Bristol : IOP Publishing, 2019. — Vol. 511 : Perspective Materials of Constructional and Medical Purpose : International Scientific and Technical Youth Conference, 26–30 November 2018, Tomsk, Russian Federation : [proceedings]. — [012004, 5 p.]. |
Abstract: | This paper presents the experimental results of the fracture morphology of InGaN/GaN heterostructures and epitaxial GaN layers deposited on sapphire substrates after irradiation with high current electron beams. A special type of damage - microspheres, ~1-5 [mu]m was discovered and studied. The results show that the microspheres act as diffractive optical elements redistributing the stimulated emission of InGaN/GaN in space. |
URI: | http://earchive.tpu.ru/handle/11683/55437 |
Appears in Collections: | Материалы конференций |
Files in This Item:
File | Description | Size | Format | |
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dx.doi.org-10.1088-1757-899X-511-1-012004.pdf | 678,59 kB | Adobe PDF | View/Open |
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