Please use this identifier to cite or link to this item: http://earchive.tpu.ru/handle/11683/33966
Title: Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation
Authors: Takabayashi, Yushi
Bagrov, Vladislav Gavrilovich
Bogdanov, Oleg Viktorovich
Pivovarov, Yuriy Leonidovich
Tukhfatullin, Timur Ahatovich
Keywords: кристаллы; кремний; релятивистские электроны; каналирование
Issue Date: 2016
Publisher: IOP Publishing
Citation: Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation / Yu. Takabayashi [et al.] // Journal of Physics: Conference Series. — 2016. — Vol. 732 : Radiation from Relativistic Electrons in Periodic Structures (RREPS2015) : XI International Symposium, 6–11 September 2015, Saint Petersburg, Russian Federation : [proceedings]. — [012036, 8 p.].
Abstract: New experimental data on planar channeling of 255 MeV electrons in a 0.74 nm Si Half-Wave Crystal (HWC) obtained at SAGA-LS facility are presented. The computer simulation showed that the angular distribution of electrons after penetration through the HWC revealed the number of unknown before peculiarities is connected with specific electron trajectories in HWC. These specific trajectories lead to specific radiation, the properties of which are analyzed.
URI: http://earchive.tpu.ru/handle/11683/33966
Appears in Collections:Материалы конференций

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